A Quantitative Drain Current Thermal Model for Thermal Gradient Correction in a Fully-depleted Soi Mos
نویسندگان
چکیده
1. Abstract The localized heating of semiconductor devices on an integrated circuit can cause pronounced change in the operating characteristics of the circuit. This work proposes a mathematical model to calculate the changes in the output parameters of a FD SOI MOS used in the integrated circuits. The device characteristics change due to non-linearity in operation of the high heat dissipating MOS. The variation in the drain current of a MOS is plotted graphically & the mathematical model used to calculate this change shall be applied on a SOI MOS differential amplifier circuit. The graph with the applied correction for the change in the output current, as suggested by the mathematical model is also plotted for the SOI MOS and shall be applied on the differential amplifier in the final paper.
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